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| JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ae ae PWU 300|I s, duty cycleU 10% CONDITIONS Open emitter Open base Open collector VALUE -150 -100 -7 -5 -10 -3 1.5 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA1644 SYMBOL MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.3 V VCEsat -2 VBE sat -1 Collector-emitter saturation voltage IC=-4A; IB=-0.2A IC=-3A; IB=-0.15A -0.5 V Base-emitter saturation voltage -1.2 V VBE sat -2 Base-emitter saturation voltage IC=-4A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -10 |I A hFE-1 DC current gain IC=-0.2A ; VCE=-2V 100 hFE-2 hFE-3 DC current gain IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 100 400 DC current gain 60 hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1644 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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